| PART |
Description |
Maker |
| MB81ES173225-15-X MB81ES171625-15-X E511408 MB81ES |
SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
From old datasheet system
Consumer FCRAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
| MB81ES123245-10 |
128 M-BIT (4-BANK 】 1 M-WORD 】 32-BIT) SINGLE DATA RATE I/F FCRAM Consumer/Embedded Application Specific Memory for SiP
|
Fujitsu Media Devices Limited
|
| MB81P643287-50 MB81P643287-60 |
MEMORY 8 x 256K x 32 BIT, FCRAM CORE BASED DOUBLE DATA RATE SDRAM
|
Fujitsu Microelectronics
|
| MB81P643287 |
MEMORY CMOS 8 x 256K x 32 BIT, FCRAM CORE BASED DOUBLE DATA RATE SDRAM
|
Fujitsu Microelectronics
|
| IDT5T9050PGI IDT5T9050 |
2.5V SINGLE DATA RATE 1:5 CLOCK BUFFER TERABUFFERJR 2.5V的单数据传输速率1:5时钟缓冲器TERABUFFER⑩JR
2.5V SINGLE DATA RATE 1:5 CLOCK BUFFER TERABUFFER⑩ JR
2.5V Single Data Rate 1:5 Clock Buffer Terabuffer Jr.
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IS45S16160C |
256 Mb Single Data Rate Synchronous DRAM
|
Integrated Silicon Solution
|
| IS42S16160C IS42S16160C-6TL IS42S16160C-6TLI IS42S |
256 Mb Single Data Rate Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| W9725G6JB25I |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M13S128324A-2M |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
